2SK3018

Product Detailed Parameters

• Description：30V 100MA 8@4.5V,50MA 200MW 2V 1
• Series：-
• Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：30 V
• Current - Continuous Drain (Id) @ 25°C：100mA
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：7.5Ohm @ 400mA, 10V
• Vgs(th) (Max) @ Id：2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
• FET Feature：-
• Power Dissipation (Max)：200mW
• Operating Temperature：150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：SOT-23
• Package / Case：TO-236-3, SC-59, SOT-23-3

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