2SK3447TZ-E

2SK3447TZ-E

$0.43
  • Description:2SK3447TZ-E - SILICON N CHANNEL
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:1e3386fe08fa Category: Brand:

  
  • Quantity
    • -
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Product Detailed Parameters

  • Description:2SK3447TZ-E - SILICON N CHANNEL
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:1.95Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:85 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):900mW (Ta)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92MOD
  • Package / Case:TO-226-3, TO-92-3 Long Body

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2SK3447TZ-E

Buying Guide
Summary

Renesas 2SK3447TZ-E is sourced in Single FETs, MOSFETs category when teams want clear constraints and a repeatable validation path. Key specs include Description (2SK3447TZ-E - SILICON N CHANNEL), Packaging (Bulk), Temperature (150°C), Package/case (TO-226-3, TO-92-3 Long Body), and Mounting (Through Hole).

Selection Notes
  • For 2SK3447TZ-E, verify FET Type (N-Channel) and compare it against your reference design limits.
  • Double-check the mounting type (Through Hole) for your intended installation method.
  • Confirm the supply current (1A (Ta)) is acceptable for standby and active operation.
  • Verify the operating temperature range (150°C) and derate as needed in your application.
Alternates & Substitutions
  • For Single FETs, MOSFETs substitutions, lock footprint/pinout and operating envelope first, then verify the critical performance conditions on your hardware.
  • Treat substitutions as a validation task: check limits, then re-test the assumptions that mattered in your bring-up.
  • Start by confirming the physical match (package/case TO-226-3, TO-92-3 Long Body, supplier package TO-92MOD, mounting Through Hole) so the swap does not create a footprint risk.
  • When in doubt, treat the swap as an ECO: define acceptance criteria, then validate under worst-case operating corners.
FAQ

What details help you quote 2SK3447TZ-E quickly?
Provide the part number (2SK3447TZ-E), quantity, required lead time, and any packaging or documentation requirements.

Who is the manufacturer of 2SK3447TZ-E?
Renesas

What packaging is listed for 2SK3447TZ-E?
Bulk

What Input Capacitance (Ciss) (Max) @ Vds is listed for 2SK3447TZ-E?
85 pF @ 10 V

Application Scenarios

When Renesas 2SK3447TZ-E is used in Single FETs, MOSFETs designs, teams typically start by confirming interfaces, supply rails, operating envelope, and qualification expectations. Engineers generally treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. Design teams generally favor switches with clear SOA and repeatable behavior because it simplifies protection design and validation. They switch or control current and voltage, enabling load control, power conversion, and signal conditioning at the component level. In industrial power stages, device choices are validated for SOA margins and thermal rise under realistic waveforms. Within motor control and robotics, MOSFET stages must survive stalls and reversals, so SOA and transient strategy are validated under real waveforms. In the end, reducing integration uncertainty is what keeps schedules predictable and field reliability high.

Compatibility Advice
  • For compatibility, verify clamp/snubber behavior so overshoot is bounded in production wiring and harnesses. This helps field behavior stay predictable across lots.
  • For second-source planning, confirm SOA and avalanche margins under the real waveform, because parasitics decide peak stress. This keeps acceptance criteria measurable and repeatable.
Project Fit
  • Usually not a good fit when integrating Renesas 2SK3447TZ-E for Single FETs, MOSFETs, parasitics and switching stress cannot be measured, so SOA and transient margins remain unproven, because the remaining risk is system-level and cannot be bounded by datasheet checks alone.
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