3N163 TO-72 4L ROHS

Product Detailed Parameters

• Description：P-CHANNEL, SINGLE ENHANCEMENT MO
• Series：-
• Mfr：Linear Integrated Systems, Inc.
• Package：Bulk
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：40 V
• Current - Continuous Drain (Id) @ 25°C：50mA
• Drive Voltage (Max Rds On, Min Rds On)：20V
• Rds On (Max) @ Id, Vgs：250Ohm @ 100µA, 20V
• Vgs(th) (Max) @ Id：5V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：-6.5V
• Input Capacitance (Ciss) (Max) @ Vds：3.5 pF @ 15 V
• FET Feature：-
• Power Dissipation (Max)：375mW
• Operating Temperature：-
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-72-4
• Package / Case：TO-206AF, TO-72-4 Metal Can

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