4N60L

Product Detailed Parameters

• Description：MOSFET N-CH 600V 4A DPAK
• Series：*
• Mfr：UMW
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：600 V
• Current - Continuous Drain (Id) @ 25°C：4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：2.4Ohm @ 2A, 10V
• Vgs(th) (Max) @ Id：4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：±30V
• Input Capacitance (Ciss) (Max) @ Vds：-
• FET Feature：-
• Power Dissipation (Max)：104W
• Operating Temperature：150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：TO-252 (DPAK)
• Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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