AMTP65H150G4PS

Product Detailed Parameters

• Description：GAN FET N-CH 650V TO-220
• Series：-
• Mfr：Analog Power Inc.
• Package：Tube
• FET Type：N-Channel
• Technology：GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：150mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id：1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：8 nC @ 6 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：598 pF @ 400 V
• FET Feature：-
• Power Dissipation (Max)：300W (Tc)
• Operating Temperature：-55°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220AB
• Package / Case：TO-220-3

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