AS3D030065C

Product Detailed Parameters

• Description：DIODE SIL CARB 650V 35A TO2472
• Series：-
• Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
• Package：Tube
• Technology：SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max)：650 V
• Current - Average Rectified (Io)：35A
• Voltage - Forward (Vf) (Max) @ If：1.8 V @ 30 A
• Speed：No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr)：0 ns
• Current - Reverse Leakage @ Vr：20 µA @ 650 V
• Capacitance @ Vr, F：1805pF @ 0V, 1MHz
• Mounting Type：Through Hole
• Package / Case：TO-247-2
• Supplier Device Package：TO-247-2
• Operating Temperature - Junction：-55°C ~ 175°C
• Grade：-
• Qualification：-

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