ASZM040120T

Product Detailed Parameters

• Description：N-CHANNEL SILICON CARBIDE POWER
• Series：-
• Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：68A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：18V, 20V
• Rds On (Max) @ Id, Vgs：32mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id：3.6V @ 9.5mA
• Gate Charge (Qg) (Max) @ Vgs：87 nC @ 18 V
• Vgs (Max)：+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：2820 pF @ 1000 V
• FET Feature：-
• Power Dissipation (Max)：340W (Tc)
• Operating Temperature：-55°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-4
• Package / Case：TO-247-4

Download product information