BSP170P

Product Detailed Parameters

• Description：MOSFET P-CH 60V 1.9A SOT223
• Series：*
• Mfr：UMW
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：60 V
• Current - Continuous Drain (Id) @ 25°C：1.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：300mOhm @ 1.9A, 10V
• Vgs(th) (Max) @ Id：4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：-
• FET Feature：-
• Power Dissipation (Max)：1.8W (Ta)
• Operating Temperature：-55°C ~ 155°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：SOT-223-4
• Package / Case：TO-261-4, TO-261AA

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