BSS123

Product Detailed Parameters

• Description：N-CHANNEL ENHANCEMENT MODE MOSFE
• Series：-
• Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 10V
• Vgs(th) (Max) @ Id：2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：14 pF @ 50 V
• FET Feature：-
• Power Dissipation (Max)：350mW (Ta)
• Operating Temperature：150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：SOT-23
• Package / Case：TO-236-3, SC-59, SOT-23-3

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