C2M0280120D

Product Detailed Parameters

• Description：SICFET N-CH 1200V 10A TO247-3
• Series：Z-FET™
• Mfr：Wolfspeed, Inc.
• Package：Tube
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：20V
• Rds On (Max) @ Id, Vgs：370mOhm @ 6A, 20V
• Vgs(th) (Max) @ Id：2.8V @ 1.25mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs：20.4 nC @ 20 V
• Vgs (Max)：+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：259 pF @ 1000 V
• FET Feature：-
• Power Dissipation (Max)：62.5W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-3
• Package / Case：TO-247-3

Download product information