C3M0065100J

Product Detailed Parameters

• Description：SICFET N-CH 1000V 35A D2PAK-7
• Series：C3M™
• Mfr：Wolfspeed, Inc.
• Package：Tube
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：1000 V
• Current - Continuous Drain (Id) @ 25°C：35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：15V
• Rds On (Max) @ Id, Vgs：78mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id：3.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs：35 nC @ 15 V
• Vgs (Max)：+15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 600 V
• FET Feature：-
• Power Dissipation (Max)：113.5W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：D2PAK-7
• Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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