C3M0900170M

Product Detailed Parameters

• Description：SIC, MOSFET, 900M, 1700V, TO-247
• Series：-
• Mfr：Wolfspeed, Inc.
• Package：Tube
• FET Type：N-Channel
• Technology：SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss)：1700 V
• Current - Continuous Drain (Id) @ 25°C：4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：15V
• Rds On (Max) @ Id, Vgs：1.25Ohm @ 1.99A, 15V
• Vgs(th) (Max) @ Id：4.2V @ 550µA
• Gate Charge (Qg) (Max) @ Vgs：10 nC @ 15 V
• Vgs (Max)：+20V, -8V
• Input Capacitance (Ciss) (Max) @ Vds：202 pF @ 1.2 kV
• FET Feature：-
• Power Dissipation (Max)：33W (Tc)
• Operating Temperature：-55°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-3PF-3L
• Package / Case：TO-3P-3 Full Pack

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