CPMF-1200-S160B

Product Detailed Parameters

• Description：SICFET N-CH 1200V 28A DIE
• Series：Z-FET™
• Mfr：Wolfspeed, Inc.
• Package：Bulk
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：28A (Tj)
• Drive Voltage (Max Rds On, Min Rds On)：20V
• Rds On (Max) @ Id, Vgs：220mOhm @ 10A, 20V
• Vgs(th) (Max) @ Id：4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 20 V
• Vgs (Max)：+25V, -5V
• Input Capacitance (Ciss) (Max) @ Vds：928 pF @ 800 V
• FET Feature：-
• Power Dissipation (Max)：202W (Tj)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：Die
• Package / Case：Die

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