FBG30N04CSH

FBG30N04CSH

$333.23000
  • Description:MOSFET 2N-CH 300V 4A 4SMD
  • Series:eGaN®

SKU:b9f80711b5d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 300V 4A 4SMD
  • Series:eGaN®
  • Mfr:EPC Space, LLC
  • Package:Bulk
  • Technology:GaNFET (Gallium Nitride)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):300V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Rds On (Max) @ Id, Vgs:404mOhm @ 4A, 5V
  • Vgs(th) (Max) @ Id:2.8V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs:2.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:450pF @ 150V
  • Power - Max:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:4-SMD
  • Grade:-
  • Qualification:-

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FBG30N04CSH

FBG30N04CSHFBG30N04CSH
$333.23000
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