FDN306P

Product Detailed Parameters

• Description：12V 2.6A 40M@4.5V,2.6A 500MW 1.5
• Series：-
• Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：12 V
• Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
• Rds On (Max) @ Id, Vgs：40mOhm @ 2.6A, 4.5V
• Vgs(th) (Max) @ Id：1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 4.5 V
• Vgs (Max)：±8V
• Input Capacitance (Ciss) (Max) @ Vds：1015 pF @ 9 V
• FET Feature：-
• Power Dissipation (Max)：500mW (Tc)
• Operating Temperature：150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：SOT-23
• Package / Case：TO-236-3, SC-59, SOT-23-3

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