FF2600UXTR33T2M1BPSA1

Product Detailed Parameters

• Description：MOSFET 2N-CH 3300V AG-XHP2K33
• Series：CoolSiC™
• Mfr：Infineon Technologies
• Package：Box
• Technology：Silicon Carbide (SiC)
• Configuration：2 N-Channel (Half Bridge)
• FET Feature：-
• Drain to Source Voltage (Vdss)：3300V (3.3kV)
• Current - Continuous Drain (Id) @ 25°C：720A (Tc)
• Rds On (Max) @ Id, Vgs：3.1mOhm @ 750A, 15V
• Vgs(th) (Max) @ Id：5.55V @ 675mA
• Gate Charge (Qg) (Max) @ Vgs：3750nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds：152000pF @ 1.8kV
• Power - Max：-
• Operating Temperature：-40°C ~ 175°C (TJ)
• Mounting Type：Chassis Mount
• Package / Case：Module
• Supplier Device Package：AG-XHP2K33
• Grade：-
• Qualification：-

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