FII50-12E

FII50-12E

  • Description:IGBT H BRIDGE 1200V 50A I4PAK5
  • Series:-

SKU:1f2141b117c2 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT H BRIDGE 1200V 50A I4PAK5
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:NPT
  • Configuration:Half Bridge
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:200 W
  • Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 30A
  • Current - Collector Cutoff (Max):400 µA
  • Input Capacitance (Cies) @ Vce:2 nF @ 25 V
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:i4-Pac™-5
  • Supplier Device Package:ISOPLUS i4-PAC™

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FII50-12E

Buying Guide
Summary

IXYS FII50-12E is an electronic component in IGBT Arrays category. Key specs: description: IGBT H BRIDGE 1200V 50A I4PAK5; packaging: Tube; temperature: -55°C ~ 150°C (TJ); package/case: i4-Pac™-5; mounting: Through Hole; input: Standard.

Selection Notes
  • For FII50-12E, confirm package/case i4-Pac™-5, mounting Through Hole to ensure footprint compatibility.
  • For FII50-12E, validate the operating temperature range (-55°C ~ 150°C (TJ)) against your environment.
  • For FII50-12E, review the latest datasheet revision and confirm key electrical characteristics for your use case (packaging Tube; temperature -55°C ~ 150°C (TJ)).
FAQ

What should I provide for an accurate quote for FII50-12E?
Send the part number (FII50-12E), quantity, target delivery date, and any required packaging or documentation.

Who is the manufacturer/brand for FII50-12E?
IXYS

What is the package/case of FII50-12E?
i4-Pac™-5

What is the mounting type of FII50-12E?
Through Hole

Application Scenarios
IXYS FII50-12E in the IGBT Arrays category is typically selected when engineers need predictable, spec-driven behavior in a production design. Good discrete choices improve efficiency and robustness while keeping BOM cost and thermal design manageable. They switch or amplify current and voltage, enabling load control, power conversion, and signal conditioning at the component level. In automotive electronics, switching devices survive load dumps and inductive kickback while meeting EMI constraints. In power adapters, MOSFET choices influence efficiency, heat, and audible noise during burst-mode operation. In robotics, motor switching stages must handle stalls and rapid reversals without entering unsafe SOA conditions. Overall, it improves predictability by keeping key performance stable across manufacturing variance and operating conditions.
FII50-12EFII50-12E

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