G09N06S2

Product Detailed Parameters

• Description：MOSFET 2N-CH 60V 9A 8SOP
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• Technology：MOSFET (Metal Oxide)
• Configuration：2 N-Channel
• FET Feature：-
• Drain to Source Voltage (Vdss)：60V
• Current - Continuous Drain (Id) @ 25°C：9A (Tc)
• Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id：2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：47nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds：2180pF @ 30V
• Power - Max：2.6W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：Surface Mount
• Package / Case：8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package：8-SOP
• Grade：-
• Qualification：-

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