G180C06Y

Product Detailed Parameters

• Description：MOSFET N/P-CH 60V 50A TO252-4
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• Technology：MOSFET (Metal Oxide)
• Configuration：N and P-Channel, Common Drain
• FET Feature：-
• Drain to Source Voltage (Vdss)：60V
• Current - Continuous Drain (Id) @ 25°C：50A (Tc), 60A (Tc)
• Rds On (Max) @ Id, Vgs：17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id：2V @ 250µA, 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：39nC @ 4.5V, 62nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds：2429pF @ 30V, 4471pF @ 30V
• Power - Max：69W (Tc), 115W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：Surface Mount
• Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
• Supplier Device Package：TO-252-4
• Grade：-
• Qualification：-

Download product information