G220P02D2

Product Detailed Parameters

• Description：P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-
• Series：TrenchFET®
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：20 V
• Current - Continuous Drain (Id) @ 25°C：8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：20mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id：1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
• Vgs (Max)：±12V
• Input Capacitance (Ciss) (Max) @ Vds：1873 pF @ 10 V
• FET Feature：-
• Power Dissipation (Max)：3.5W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：6-DFN (2x2)
• Package / Case：6-UDFN Exposed Pad

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