G250N03IE

Product Detailed Parameters

• Description：N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
• Series：TrenchFET®
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：30 V
• Current - Continuous Drain (Id) @ 25°C：5.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
• Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id：1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 4.5 V
• Vgs (Max)：±10V
• Input Capacitance (Ciss) (Max) @ Vds：573 pF @ 15 V
• FET Feature：-
• Power Dissipation (Max)：1.4W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：SOT-23-3
• Package / Case：TO-236-3, SC-59, SOT-23-3

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