GS65R045Q4A

Product Detailed Parameters

• Description：SiC MOSFET N-CH 650V 51A TO-247
• Series：TrenchFET®
• Mfr：Goford Semiconductor
• Package：Tube
• FET Type：-
• Technology：-
• Drain to Source Voltage (Vdss)：-
• Current - Continuous Drain (Id) @ 25°C：-
• Drive Voltage (Max Rds On, Min Rds On)：-
• Rds On (Max) @ Id, Vgs：-
• Vgs(th) (Max) @ Id：-
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：-
• Input Capacitance (Ciss) (Max) @ Vds：-
• FET Feature：-
• Power Dissipation (Max)：-
• Operating Temperature：-
• Grade：Automotive
• Qualification：AEC-Q101
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-4L
• Package / Case：TO-247-4

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