GT060N04D52

Product Detailed Parameters

• Description：MOSFET 2N-CH 40V 62A 8DFN
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR)
• Technology：MOSFET (Metal Oxide)
• Configuration：2 N-Channel
• FET Feature：-
• Drain to Source Voltage (Vdss)：40V
• Current - Continuous Drain (Id) @ 25°C：62A (Tc)
• Rds On (Max) @ Id, Vgs：6.5mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id：2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds：1276pF @ 20V
• Power - Max：20W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：Surface Mount
• Package / Case：8-PowerTDFN
• Supplier Device Package：8-DFN (4.9x5.75)
• Grade：-
• Qualification：-

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