GT700P08T

Product Detailed Parameters

• Description：P-80V, -25A,RD<72M@-10V,VTH-2V~-
• Series：SGT
• Mfr：Goford Semiconductor
• Package：Tube
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：80 V
• Current - Continuous Drain (Id) @ 25°C：25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：72mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id：3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：1639 pF @ 40 V
• FET Feature：-
• Power Dissipation (Max)：125W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220
• Package / Case：TO-220-3

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