HAS175M12BM3

Product Detailed Parameters

• Description：MOSFET 2N-CH 1200V 175A
• Series：-
• Mfr：Wolfspeed, Inc.
• Package：Bulk
• Technology：Silicon Carbide (SiC)
• Configuration：2 N-Channel (Half Bridge)
• FET Feature：-
• Drain to Source Voltage (Vdss)：1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C：175A
• Rds On (Max) @ Id, Vgs：-
• Vgs(th) (Max) @ Id：-
• Gate Charge (Qg) (Max) @ Vgs：-
• Input Capacitance (Ciss) (Max) @ Vds：-
• Power - Max：-
• Operating Temperature：-
• Mounting Type：Chassis Mount
• Package / Case：Module
• Supplier Device Package：-
• Grade：-
• Qualification：-

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