Product Detailed Parameters

• Description：HMJ45N03S
• Series：-
• Mfr：HY Electronic (Cayman) Limited
• Package：Tape & Reel (TR)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：30 V
• Current - Continuous Drain (Id) @ 25°C：45A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id：1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：25.2 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：1230 pF @ 15 V
• FET Feature：-
• Power Dissipation (Max)：25W (Ta)
• Operating Temperature：150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：8-PDFN (3x3)
• Package / Case：8-PowerVDFN

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