HTNFET-D

Product Detailed Parameters

• Description：MOSFET N-CH 55V 8CDIP
• Series：HTMOS™
• Mfr：Honeywell Aerospace
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：55 V
• Current - Continuous Drain (Id) @ 25°C：-
• Drive Voltage (Max Rds On, Min Rds On)：5V
• Rds On (Max) @ Id, Vgs：400mOhm @ 100mA, 5V
• Vgs(th) (Max) @ Id：2.4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 5 V
• Vgs (Max)：10V
• Input Capacitance (Ciss) (Max) @ Vds：290 pF @ 28 V
• FET Feature：-
• Power Dissipation (Max)：50W (Tj)
• Operating Temperature：-55°C ~ 225°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：8-CDIP-EP
• Package / Case：8-CDIP Exposed Pad

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