IRFD9123

Product Detailed Parameters

• Description：MOSFET P-CH 100V 1A 4DIP
• Series：-
• Mfr：Harris Corporation
• Package：Tube
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：-
• Rds On (Max) @ Id, Vgs：600mOhm @ 600mA, 10V
• Vgs(th) (Max) @ Id：4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
• Vgs (Max)：-
• Input Capacitance (Ciss) (Max) @ Vds：390 pF @ 25 V
• FET Feature：-
• Power Dissipation (Max)：-
• Operating Temperature：-
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：4-HVMDIP
• Package / Case：4-DIP (0.300", 7.62mm)

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