IRFR220

Product Detailed Parameters

• Description：MOSFET N-CH 200V 4.6A TO252AA
• Series：-
• Mfr：Harris Corporation
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：200 V
• Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：-
• Rds On (Max) @ Id, Vgs：800mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id：4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：330 pF @ 25 V
• FET Feature：-
• Power Dissipation (Max)：50W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：TO-252AA
• Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Download product information