PMCM6501VPEZ

Product Detailed Parameters

• Description：SMALL SIGNAL FIELD-EFFECT TRANSI
• Series：-
• Mfr：NXP Semiconductors
• Package：Bulk
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：12 V
• Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
• Rds On (Max) @ Id, Vgs：25mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id：900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：29.4 nC @ 4.5 V
• Vgs (Max)：±8V
• Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 6 V
• FET Feature：-
• Power Dissipation (Max)：556mW (Ta), 12.5W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：6-WLCSP (1.48x0.98)
• Package / Case：6-XFBGA, WLCSP

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