RFW2N06RLE

Product Detailed Parameters

• Description：N-CHANNEL POWER MOSFET
• Series：-
• Mfr：Harris Corporation
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：60 V
• Current - Continuous Drain (Id) @ 25°C：2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：5V
• Rds On (Max) @ Id, Vgs：200mOhm @ 2A, 5V
• Vgs(th) (Max) @ Id：2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
• Vgs (Max)：+10V, -5V
• Input Capacitance (Ciss) (Max) @ Vds：535 pF @ 25 V
• FET Feature：-
• Power Dissipation (Max)：1.09W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：4-DIP, Hexdip
• Package / Case：4-DIP (0.300", 7.62mm)

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