SUP50N03-5M1P-GE3

Product Detailed Parameters

• Description：MOSFET N-CH 30V 50A TO220AB
• Series：TrenchFET®
• Mfr：Vishay Siliconix
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：30 V
• Current - Continuous Drain (Id) @ 25°C：50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：5.1mOhm @ 22A, 10V
• Vgs(th) (Max) @ Id：2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：2780 pF @ 15 V
• FET Feature：-
• Power Dissipation (Max)：2.7W (Ta), 59.5W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220AB
• Package / Case：TO-220-3

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