SUP85N10-10P-GE3

Product Detailed Parameters

• Description：MOSFET N-CH 100V 85A TO220AB
• Series：TrenchFET®
• Mfr：Vishay Siliconix
• Package：Tube
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id：4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：4660 pF @ 50 V
• FET Feature：-
• Power Dissipation (Max)：3.75W (Ta), 227W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220AB
• Package / Case：TO-220-3

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