TP65H015G5WS

TP65H015G5WS

$27.41
  • Description:650 V 95 A GAN FET
  • Series:SuperGaN™
  • Mfr:Transphorm
  • Package:Tube

SKU:ecf4a416a013 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:650 V 95 A GAN FET
  • Series:SuperGaN™
  • Mfr:Transphorm
  • Package:Tube
  • FET Type:N-Channel
  • Technology:GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id:4.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5218 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):266W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

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TP65H015G5WS

Buying Guide
Summary

Transphorm TP65H015G5WS is an electronic component in Single FETs, MOSFETs category. Key specs: description: 650 V 95 A GAN FET; series: SuperGaN™; packaging: Tube; temperature: -55°C ~ 150°C (TJ); package/case: TO-247-3; mounting: Through Hole.

Selection Notes
  • For TP65H015G5WS, confirm package/case TO-247-3, mounting Through Hole to ensure footprint compatibility.
  • For TP65H015G5WS, validate the operating temperature range (-55°C ~ 150°C (TJ)) against your environment.
  • For TP65H015G5WS, if you plan to run near limits, apply derating and validate on your worst-case operating conditions (temperature -55°C ~ 150°C (TJ); series SuperGaN™).
FAQ

What should I provide for an accurate quote for TP65H015G5WS?
Send the part number (TP65H015G5WS), quantity, target delivery date, and any required packaging or documentation.

Who is the manufacturer/brand for TP65H015G5WS?
Transphorm

What is the package/case of TP65H015G5WS?
TO-247-3

What is the mounting type of TP65H015G5WS?
Through Hole

Application Scenarios
Transphorm TP65H015G5WS is listed under the Single FETs, MOSFETs category and is commonly used when correctness, reliability, and qualification repeatability matter. Selection focuses on SOA, switching loss, gate charge, package parasitics, and thermal impedance under realistic waveforms. They are essential when a design must handle inductive loads, fast edges, or high current in compact footprints. In harsh environments, package selection affects vibration robustness and heat spreading into PCB copper. In industrial automation, discrete switches drive solenoids and relays near motors, so transient handling and thermal design are critical. Overall, disciplined selection and verification reduce integration risk and improve field reliability.
TP65H015G5WSTP65H015G5WS
$27.41
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