TP65H035G4WS

TP65H035G4WS

$16.14
  • Description:GANFET N-CH 650V 46.5A TO247-3
  • Series:SuperGaN™
  • Mfr:Transphorm
  • Package:Tube

SKU:f976240f2159 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:GANFET N-CH 650V 46.5A TO247-3
  • Series:SuperGaN™
  • Mfr:Transphorm
  • Package:Tube
  • FET Type:N-Channel
  • Technology:GaNFET (Cascode Gallium Nitride FET)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:41mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 0 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):156W (Tc)
  • Operating Temperature:-55°C ~ 150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

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TP65H035G4WS

Buying Guide
Summary

Transphorm TP65H035G4WS is an electronic component in Single FETs, MOSFETs category. Key specs: description: GANFET N-CH 650V 46.5A TO247-3; series: SuperGaN™; packaging: Tube; temperature: -55°C ~ 150°C; package/case: TO-247-3; mounting: Through Hole.

Selection Notes
  • For TP65H035G4WS, confirm package/case TO-247-3, mounting Through Hole to ensure footprint compatibility.
  • For TP65H035G4WS, validate the operating temperature range (-55°C ~ 150°C) against your environment.
  • For TP65H035G4WS, if this is for production, consider sourcing and lifecycle risk (second source / availability) (mounting Through Hole; packaging Tube).
FAQ

What information do you need to quote TP65H035G4WS?
Send the part number (TP65H035G4WS), quantity, target delivery date, and any required packaging or documentation.

Who is the manufacturer/brand for TP65H035G4WS?
Transphorm

What is the mounting type of TP65H035G4WS?
Through Hole

What is the supply current of TP65H035G4WS?
46.5A (Tc)

Application Scenarios
Transphorm TP65H035G4WS is listed under the Single FETs, MOSFETs category and is commonly used when correctness, reliability, and qualification repeatability matter. Selection focuses on SOA, switching loss, gate charge, package parasitics, and thermal impedance under realistic waveforms. They are essential when a design must handle inductive loads, fast edges, or high current in compact footprints. In robotics, motor switching stages must handle stalls and rapid reversals without entering unsafe SOA conditions. In consumer electronics, small load switches improve battery life by gating sub-rails and peripherals cleanly. Overall, it improves predictability by keeping key performance stable across manufacturing variance and operating conditions.
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