TRS4E65F,S1Q

Product Detailed Parameters

• Description：DIODE SIL CARB 650V 4A TO220-2L
• Series：-
• Mfr：Toshiba Semiconductor and Storage
• Package：Tube
• Technology：SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max)：650 V
• Current - Average Rectified (Io)：4A
• Voltage - Forward (Vf) (Max) @ If：1.6 V @ 4 A
• Speed：No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr)：0 ns
• Current - Reverse Leakage @ Vr：20 µA @ 650 V
• Capacitance @ Vr, F：16pF @ 650V, 1MHz
• Mounting Type：Through Hole
• Package / Case：TO-220-2
• Supplier Device Package：TO-220-2L
• Operating Temperature - Junction：175°C (Max)
• Grade：-
• Qualification：-

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