TRS8V65H,LQ

Product Detailed Parameters

• Description：DIODE SIL CARBIDE 650V 8A 4DFNEP
• Series：-
• Mfr：Toshiba Semiconductor and Storage
• Package：Tape & Reel (TR),Cut Tape (CT)
• Technology：SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max)：650 V
• Current - Average Rectified (Io)：8A
• Voltage - Forward (Vf) (Max) @ If：1.35 V @ 8 A
• Speed：No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr)：0 ns
• Current - Reverse Leakage @ Vr：90 µA @ 650 V
• Capacitance @ Vr, F：520pF @ 1V, 1MHz
• Mounting Type：Surface Mount
• Package / Case：4-VSFN Exposed Pad
• Supplier Device Package：4-DFN-EP (8x8)
• Operating Temperature - Junction：175°C
• Grade：-
• Qualification：-

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