TW070J120B,S1Q

Product Detailed Parameters

• Description：SICFET N-CH 1200V 36A TO3P
• Series：-
• Mfr：Toshiba Semiconductor and Storage
• Package：Tube
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：20V
• Rds On (Max) @ Id, Vgs：90mOhm @ 18A, 20V
• Vgs(th) (Max) @ Id：5.8V @ 20mA
• Gate Charge (Qg) (Max) @ Vgs：67 nC @ 20 V
• Vgs (Max)：±25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 800 V
• FET Feature：-
• Power Dissipation (Max)：272W (Tc)
• Operating Temperature：-55°C ~ 175°C
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-3P(N)
• Package / Case：TO-3P-3, SC-65-3

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