TW092V65C,LQ

Product Detailed Parameters

• Description：N-CH SIC MOSFET, 650 V, 0.092 OH
• Series：-
• Mfr：Toshiba Semiconductor and Storage
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：18V
• Rds On (Max) @ Id, Vgs：136mOhm @ 15A, 18V
• Vgs(th) (Max) @ Id：5V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs：28 nC @ 18 V
• Vgs (Max)：+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：873 pF @ 400 V
• FET Feature：-
• Power Dissipation (Max)：111W (Tc)
• Operating Temperature：175°C
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：4-DFN-EP (8x8)
• Package / Case：4-VSFN Exposed Pad

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