VQ1001P

Product Detailed Parameters

• Description：MOSFET 4N-CH 30V 0.83A 14DIP
• Series：-
• Mfr：Vishay Siliconix
• Package：Tube
• Technology：MOSFET (Metal Oxide)
• Configuration：4 N-Channel
• FET Feature：Logic Level Gate
• Drain to Source Voltage (Vdss)：30V
• Current - Continuous Drain (Id) @ 25°C：830mA
• Rds On (Max) @ Id, Vgs：1.75Ohm @ 200mA, 5V
• Vgs(th) (Max) @ Id：2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：-
• Input Capacitance (Ciss) (Max) @ Vds：110pF @ 15V
• Power - Max：2W
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：Through Hole
• Package / Case：-
• Supplier Device Package：14-DIP
• Grade：-
• Qualification：-

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