VQ1006P

Product Detailed Parameters

• Description：MOSFET 4N-CH 90V 0.4A 14DIP
• Series：-
• Mfr：Vishay Siliconix
• Package：Tube
• Technology：MOSFET (Metal Oxide)
• Configuration：4 N-Channel
• FET Feature：Logic Level Gate
• Drain to Source Voltage (Vdss)：90V
• Current - Continuous Drain (Id) @ 25°C：400mA
• Rds On (Max) @ Id, Vgs：4.5Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id：2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：-
• Input Capacitance (Ciss) (Max) @ Vds：60pF @ 25V
• Power - Max：2W
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：Through Hole
• Package / Case：-
• Supplier Device Package：14-DIP
• Grade：-
• Qualification：-

Download product information