WAS350M12BM3

Product Detailed Parameters

• Description：MOSFET 2N-CH 1200V 417A
• Series：-
• Mfr：Wolfspeed, Inc.
• Package：Box
• Technology：Silicon Carbide (SiC)
• Configuration：2 N-Channel (Half Bridge)
• FET Feature：-
• Drain to Source Voltage (Vdss)：1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C：417A (Tc)
• Rds On (Max) @ Id, Vgs：5.2mOhm @ 350A, 15V
• Vgs(th) (Max) @ Id：3.6V @ 85mA
• Gate Charge (Qg) (Max) @ Vgs：844nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds：25700pF @ 800V
• Power - Max：-
• Operating Temperature：-40°C ~ 150°C (TJ)
• Mounting Type：Chassis Mount
• Package / Case：Module
• Supplier Device Package：-
• Grade：-
• Qualification：-

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