XPH2R106NC,L1XHQ

Product Detailed Parameters

• Description：MOSFET N-CH 60V 110A 8SOP
• Series：U-MOSVIII-H
• Mfr：Toshiba Semiconductor and Storage
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：60 V
• Current - Continuous Drain (Id) @ 25°C：110A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：-
• Rds On (Max) @ Id, Vgs：2.1mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id：2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：104 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：6900 pF @ 10 V
• FET Feature：-
• Power Dissipation (Max)：960mW (Ta), 170W (Tc)
• Operating Temperature：175°C
• Grade：Automotive
• Qualification：AEC-Q101
• Mounting Type：Surface Mount
• Supplier Device Package：8-SOP Advance (5x5)
• Package / Case：8-PowerVDFN

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