XPN9R614MC,L1XHQ

Product Detailed Parameters

• Description：MOSFET P-CH 40V 40A 8TSON
• Series：U-MOSVI
• Mfr：Toshiba Semiconductor and Storage
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：40 V
• Current - Continuous Drain (Id) @ 25°C：40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：9.6mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id：2.1V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
• Vgs (Max)：+10V, -20V
• Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 10 V
• FET Feature：-
• Power Dissipation (Max)：840mW (Ta), 100W (Tc)
• Operating Temperature：175°C
• Grade：Automotive
• Qualification：AEC-Q101
• Mounting Type：Surface Mount
• Supplier Device Package：8-TSON Advance-WF (3.1x3.1)
• Package / Case：8-PowerVDFN

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